Influence of high-temperature oxidation of SiC powders on curing properties of SiC slurry for digital light processing

Fabrication of silicon carbide (SiC) ceramics by digital light processing (DLP) technology is difficult owing to high refractive index and ultraviolet (UV) absorptivity SiC powders. The surface the powders can be coated with oxide (SiO2) low UV via high-temperature oxidation, reducing loss energy in DLP process realizing preparation ceramics. However, it necessary explore a modification obtain better effect Therefore, behavior thoroughly investigated this paper. results show that nano-scale film formed on short-time effectively (nʹ) When oxidation temperature 1300 ℃, compared unoxidized powders, oxidized decreases from 0.5065 0.4654, curing depth slurry increases 22±4 59±4 μm. Finally, green bodies are successfully prepared flexural strength sintered parts reaches 47.9±2.3 MPa after 3 h atmospheric sintering at 2000 ℃ without any aid.